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Simultaneous Observation of Electrical Properties and Structural Changes Using an Electron Microscope
The relationships between electrical properties and structural changes can be evaluated and validated
An electronic device fragment is placed in the electron microscope, and a movable probe electrode is applied to it, enabling observation by the electron microscope while evaluating its electrical characteristics. A MOSFET is connected to the sample side electrode to suppress excessive current. It allows evaluation of the correlation between electrical characteristics and structural changes and is useful to investigate the cause of failures.
Research
Our in-situ electron microscopy system is capable of three-terminal device measurements using two movable probes and a fixed sample holder as electrodes. A MOS transistor is inserted in the sample holder to limit the excess current flow due to stray capacitance.
Microelectronic devices that are almost ready for practical application include devices such as phase-change memory and resistance change memory that can predict structural changes accompanying resistance changes. It is difficult to confirm the mechanism of resistance changes in microdevices due to their high operating speed and nanoscale structure, but this system enables the evaluation of such a mechanism and helps to efficiently investigate the cause of the defective operation and ensure its reliability. By using this system, we can also effectively confirm the operating functions and evaluate the causes of defects in nanostructured functional devices, such as nanomachines and nanostructured secondary batteries, which are expected to be further developed in the future.
