Content of research

Our in-situ electron microscopy system is capable of three-terminal device measurements using two movable probes and a fixed sample holder as electrodes. A MOS transistor is inserted in the sample holder to limit the excess current flow due to stray capacitance.
Microelectronic devices that are almost ready for practical application include devices such as phase-change memory and resistance change memory that can predict structural changes accompanying resistance changes. It is difficult to confirm the mechanism of resistance changes in microdevices due to their high operating speed and nanoscale structure, but this system enables the evaluation of such a mechanism and helps to efficiently investigate the cause of the defective operation and ensure its reliability. By using this system, we can also effectively confirm the operating functions and evaluate the causes of defects in nanostructured functional devices, such as nanomachines and nanostructured secondary batteries, which are expected to be further developed in the future.

Potential for social implementation

• ・Checking the operation of micro-nano devices
• ・Checking the functions of phase change memory
• ・Elucidating the operating principles of resistance change memory
• ・Checking the operation of nanomachines, etc.

Appealing points to industry and local governments

Due to the small size of nanostructured devices, it has become difficult to evaluate the relationship between detailed structure and characteristics, making it hard to confirm the operating principles and evaluate reliability. These seeds form an evaluation system that is the key to solving these problems.